mmbt1015 pnp epitaxial silicon transistor sot-23 features collector current up to 150ma high hfe linearity complement to mbt1815 dimensions inches mm dim min max min max note a .106 .122 2.70 3.10 b .093 .108 2.35 2.75 c .067 .083 1.70 2.10 d .047 .059 1.20 1.50 e .014 .022 0.35 0.55 f .041 .053 1.05 1.35 g ------ .004 ------ .10 h .003 .008 .08 .20 maximum ratings junction temperature: 125 c storage temperature: -5 5 c to +15 0 c absolute maximum ratings ta= 2 5 c unless otherwise specified a b c d g collector-emitter voltage: b vceo =-50v ba h
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mcc p a r a m e t e r s y m b o l t e s t c o n d i t i o n s m i n t y p m a x u n i t n oi s e f i gure n f i c = -0 . 1 m a , v c e =-6v r g =1k ? , f = 100 h z 0 . 5 6 db r a n ge 130-200 200-400 classification of hfe1 electrical characteristics ta=2 5 c unless otherwise specified typical characteristic curves fig.1 static characteristics collector-emitter voltage ( v) i c , c o ll e c tor c u rr ent ( m a) -0 -4 -8 -12 -16 -20 0 -10 -20 -30 -40 -50 i b =-50 a i b =-100 a i b =-150 a i b =-200 a i b =-250 a i b =-300 a fig.2 dc current gain ic,collector current (ma) h fe , dc current gain 10 2 10 1 10 0 10 3 -10 3 -10 2 -10 1 -10 0 -10 -1 v ce =-6v fig.3 base-emitter on voltage ic,collector current (ma) base-emitter voltage (v) 0 -0.2 -0.4 -0.6 -0.8 -1.0 v ce =-6v ic,collector current (ma) saturation voltage (v) -10 1 fig.4 saturation voltage fig.5 current gain-bandwidth product fig.6 collector output capacitance v ce (sat) v be (sat) ic=10*i b ic,collector current (ma) 10 3 current gain-bandwidth product,f t (mhz) 10 0 10 1 10 2 v ce =-6v collector-base voltage (v) cob,capacitance (pf) 10 0 10 1 10 2 f=1mhz i e =0 -10 -1 -10 0 -10 1 -10 2 -10 3 -10 2 -10 1 -10 0 -10 -1 -10 0 -10 1 -10 2 -10 0 -10 1 -10 2 -10 3 -10 -1 -10 -2 -10 0 -10 -1 -10 -1 10 -1 rank l h p a r a m e t e r s y m b o l t e s t c o n d i t i o n s m i n t y p m a x u n i t collector-base breakdown voltage bv cbo ic=-100 a,i e =0 -50 v collector-emitter breakdown voltage bv ceo ic=-10ma,i b =0 -50 v emitter-base breakdown voltage bv ebo i e =-10 a,ic=0 -5 v c o ll e ct o r c u t - o ff c u r r en t i cbo v cb =-50v,i e =0 -100 na emitter cut-off current i ebo v eb =-5v,ic=0 -100 na dc current gain(note) h fe1 h fe2 v ce =-6v,ic=-2ma v ce =-6v,ic=-150ma 70 25 400 collector-emitter saturation voltage v ce (sat) ic=-100ma,i b =-10ma -0.1 -0.3 v base-emitter saturation voltage v be (sat) ic=-100ma,i b =-10ma -1.1 v current gain bandwidth product f t v ce =-10v,ic=-1ma 80 mhz output capacitance cob v cb =-10v,i e =0,f=1mhz 4.0 7.0 pf www. mccsemi .com revision: 2 2003/04/30
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